SSM6K202FE 2007-11-01 1 toshiba field-effect transistor silicon n-channel mos type SSM6K202FE high-speed switching applications power management switch applications ? 1.8 v drive ? low on-resistance: r on = 145 m ? (max) (@v gs = 1.8v) r on = 101 m ? (max) (@v gs = 2.5v) r on = 85 m ? (max) (@v gs = 4.0v) absolute maximum ratings (ta = 25 ? c) characteristic symbol rating unit drain?source voltage v ds 30 v gate?source voltage v gss 12 v dc i d 2.3 drain current pulse i dp 4.6 a drain power dissipation p d (note 1) 500 mw channel temperature t ch 150 c storage temperature t stg ?55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on an fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit v (br) dss i d = 1 ma, v gs = 0 30 ? ? v drain?source breakdown voltage v (br) dsx i d = 1 ma, v gs = ?12 v 18 ? ? v drain cutoff current i dss v ds = 30 v, v gs = 0 ? ? 1 a gate leakage current i gss v gs = 12 v, v ds = 0 ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 1 ma 0.4 ? 1.0 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 1.5 a (note2) 3.9 7.8 ? s i d = 1.5 a, v gs = 4.0 v (note2) ? 66 85 i d = 1.0 a, v gs = 2.5 v (note2) ? 78 101 drain?source on-resistance r ds (on) i d = 0.5 a, v gs = 1.8 v (note2) ? 95 145 m input capacitance c iss v ds = 10 v, v gs = 0, f = 1 mhz ? 270 ? pf output capacitance c oss v ds = 10 v, v gs = 0, f = 1 mhz ? 56 ? pf reverse transfer capacitance c rss v ds = 10 v, v gs = 0, f = 1 mhz ? 47 ? pf turn-on time t on ? 20 ? switching time turn-off time t off v dd = 10 v, i d = 2 a, v gs = 0 to 2.5 v, r g = 4.7 ? 31 ? ns drain?source forward voltage v dsf i d = ? 2.3 a, v gs = 0 v (note2) ? ? 0.85 ? 1.2 v note 2: pulse test unit: mm jedec D jeita D toshiba 2-2n1a weight: 3 mg (typ.) es6 1, 2, 5, 6 : drain 3 : gate 4 : source
SSM6K202FE 2007-11-01 2 switching time test circuit (a) test circuit (b) v in marking equivalent circuit (top view) notice on usage v th can be expressed as the voltage between gate and sour ce when the low operating current value is i d = 1 ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th. (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing , and containers and other objects that come into direct contact with devices should be made of antistatic materials. 6 kl 4 1 2 3 5 4 123 6 5 (c) v out v dd = 10 v r g = 4.7 d.u. < = 1% v in : t r , t f < 5 ns common source ta = 25c v dd out in 2.5 v 0 10 s r g t f t on 90% 10% 2.5 v 0 v 10% 90% t off t r v dd v ds ( on )
SSM6K202FE 2007-11-01 3 i d ? v ds 0 4 0 0.2 0.4 0.6 1 3 vgs = 1.5 v 10 v 1 2 1.8 v 2.5 v 0.8 5 r ds (on) ? ta 0 ? 50 i d = 1.5 a / v gs = 4.0 v 0 50 150 100 200 300 100 0 2 6 8 4 0 100 200 r ds (on) ? v gs 150 50 1.0 a / 2.5 v 10 i d ? v gs 10 0 0.1 1 0.001 0.01 0.0001 2.0 ? 25 c ta = 100 c 25 c 1.0 v th ? ta 1.0 0 ? 50 0 150 0.5 50 100 4.0 v 250 150 50 0.5 a / 1.8 v vgs = 4.0 v r ds (on) ? i d 0 1 3 4 2 0 100 200 150 50 5 2.5 v 1.8 v ? 25 c ta = 100 c 25 c drain?source voltage v ds (v) drain current i d (a) gate?source voltage v gs (v) drain current i d (a) common source v ds = 3 v common source ta = 25c i d = 0.5 a common source ta = 25c drain current i d (a) drain?source on-resistance r ds (on) (m ? ) gate?source voltage v gs (v) drain?source on-resistance r ds (on) (m ? ) common source ta = 25c ambient temperature ta (c) gate threshold voltage v th (v) ambient temperature ta (c) drain?source on-resistance r ds (on) (m ? ) common source common source v ds = 3 v i d = 1 ma
SSM6K202FE 2007-11-01 4 t ? i d 1 0.01 100 0.1 1000 1 10 t off 10 i dr ? v ds |y fs | ? i d 0.1 10 1 10 0.1 1 3 0.3 c ? v ds 10 0.1 1 10 100 100 1000 300 500 30 50 c iss c oss c rss 0.01 10 0 0.1 1 0.001 0.01 ?0.2 ?0.6 ?0.4 ?1.0 ?0.8 ? 25 c ta =100 c 25 c t f t on t r drain reverse current i dr (a) drain?source voltage v ds (v) drain current i d (a) forward transfer admittance ? y fs ? (s) common source v gs = 0 v ta = 25c g d s i dr common source v ds = 3 v ta = 25c switching time t (ns) drain current i d (a) drain?source voltage v ds (v) capacitance c (pf) common source ta = 25c f = 1 mhz v gs = 0 v common source v dd = 10 v v gs = 0 to 2.5 v ta = 25c r g = 4.7 p d ? t a 800 0 200 120 100 140 400 600 160 1000 80 60 40 20 0 ?20 ?40 mounted on an fr4 board (25.4 x 25.4 x 1.6 mm cu pad : 645 mm 2 ) ambient temperature ta (c) drain power dissipation p d (mw) p d ? t a
SSM6K202FE 2007-11-01 5
SSM6K202FE 2007-11-01 6 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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